Wydarzenia

Seminarium Międzynarodowego Laboratorium Silnych Pól Magnetycznych i Niskich Temperatur PAN

Development of the SOI Sensors – Structure and Si Microcrystals, Modified B and Ni Impurities

A. A. Druzhinin, Yu. M. Khoverko

Lviv Polytechnic National University, Department of Semiconductor Electronics, Lviv, Ukraine

The work is devoted to solving the scientific and technical problems of sensor technology based on silicon-on-insulator structures and silicon microcrystals doped with boron and nickel impurities.

Comprehensive study was carried out of electrical properties of silicon-on-insulator structures and silicon microcrystals in a wide temperature range at direct and alternating current, that is a prerequisite for the development of microelectronic sensors based on polycrystalline and threadlike silicon. It was found that at cryogenic temperatures in the vicinity of helium temperature the conductivity changes unevenly at localized impurity levels.

The physical models which describe the strain-induced and spin-polarization effects in silicon microcrystals and SOI structures were grounded. As a result, it the basis for the development of a new approach for sensor elements technology with predictable parameters at manufacturing process was formed.

Achieving highly sensitive strain, temperature and magnetic field sensors was proposed. This could be important for modern cryoelectronics, sensor micro- and nanoelectronics, as well as devices that are made by combining technologies for silicon-on-insulator structures and silicon microcrystals through the development of new approaches and structural and technological methods to form the functionality of aforementioned devices.