Seminarium Fizyki Politechniki Wrocławskiej
PWr, bud. A1, sala 322
Studies on the influence of defects and lattice strain on the properties of planar and columnar heterostructures based on ZnO and GaN wide-bandgap semiconductors
Dr inż. Eunika Zielony
Katedra Fizyki Doświadczalnej, Politechnika Wrocławska
This seminar will present a series of research studies conducted within my habilitation thesis, focused on planar and nanowire heterostructures based on wide-bandgap semiconductor materials, including GaN/Si and Zn(Cd,Mg)O/Si systems grown by molecular beam epitaxy. The first part of the talk will introduce the motivation behind these studies and discuss the key research challenges related to the development of nitride- and oxide-based heterostructures for optoelectronic applications.
The second part will be devoted to the presentation of the most important results obtained using complementary experimental techniques, including Raman spectroscopy, X-ray diffraction, photoluminescence, electrical characterization (current-voltage and capacitance-voltage measurements), and deep-level transient spectroscopy. Special attention will be given to the analysis of micro-strain in semiconductor nanowires and to the identification of defects responsible for the optical and electrical behavior of investigated heterostructures.
Finally, the seminar will summarize my main scientific achievements and present future research directions, including studies of core-shell nanowire structures, surface engineering of GaN nanowires, and the development of ultrafast photodetectors based on Zn(Cd)O.
