Events

Seminar of International Laboratory of High Magnetic Fields and Low Temperatures PAS

Low Temperature Performances of Doped Ge and InSb Whisker

I.Ostrovskii, Yu.Khoverko

Lviv Polytechnic National University, Department of semiconductor electronics, Scientific research center “Crystal” (Lviv, Ukraine)

The study of the magnetoresistance in Ge and InSb whiskers with impurity concentration in the vicinity to the metal-insulator transition at low temperature range 4.2 - 77 K in fields with induction up to 14 T was conducted. Magnetophonone oscillations were observed in Ge whiskers at applying of tensile and compression strain. Intervalley transitions were determined, effective masses of light and heavy electrons in n-Ge whiskers were estimated, which agree with literature data. The presence of Shubnikov-de Haas oscillations in both transverse and longitudinal magnetoresistance of InSb whiskers was observed, which allowed to determine the main parameters of samples.