Events

Seminar of International Laboratory of High Magnetic Fields and Low Temperatures PAS

Study of transport properties in doped silicon structures and microcrystals by influence of external factors

A.Druzhinin, Yu.Khoverko

Lviv Polytechnic National University, Department of Semiconductor Electronics, Scientific Research Center “Crystal” (Lviv, Ukraine)

The aim of the work is to establish the charge carrier transport mechanism in doped Si whiskers and SOI-structures at low temperatures under external factors, which allows for prediction of the properties of semiconductor materials, which are suitable for sensor applications. In particular: Studies of hopping conduction peculiarities in highly doped semiconductors, to concentrations which correspond to metal-insulator transition in Si microcrystals and SOI-structures at low temperatures and high magnetic fields up to 14 T.